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skw20n60 1 mar-00 fast s-igbt in npt-technology with soft, fast recovery anti-parallel emcon diode g c e ? 75% lower e off compared to previous generation combined with low conduction losses ? short circuit withstand time ? 10 s ? designed for: - motor controls - inverter ? npt-technology for 600v applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability ? very soft, fast recovery anti-parallel emcon diode type v ce i c v ce(sat ) t j package ordering code skw20n60 600v 20a 2.4v 150 c to-247ac Q67040-S4242 maximum ratings parameter symbol value unit collector-emitter voltage v ce 600 v dc collector current t c = 25 c t c = 100 c i c 40 20 pulsed collector current, t p limited by t jmax i cpuls 80 turn off safe operating area v ce 600v, t j 150 c - 80 diode forward current t c = 25 c t c = 100 c i f 40 20 diode pulsed current, t p limited by t jmax i fpuls 80 a gate-emitter voltage v ge 20 v short circuit withstand time 1) v ge = 15v, v cc 600v, t j 150 c t sc 10 s power dissipation t c = 25 c p tot 179 w operating junction and storage temperature t j , t stg -55...+150 c 1) allowed number of short circuits: <1000; time between short circuits: >1s.
skw20n60 2 mar-00 thermal resistance parameter symbol conditions max. value unit characteristic igbt thermal resistance, junction ? case r thjc 0.7 diode thermal resistance, junction ? case r thjcd 1.3 thermal resistance, junction ? ambient r thja to-247ac 40 k/w electrical characteristic, at t j = 25 c, unless otherwise specified value parameter symbol conditions min. typ. max. unit static characteristic collector-emitter breakdown voltage v (br)ces v ge =0v, i c =500 a 600 - - collector-emitter saturation voltage v ce(sat) v ge = 15v, i c =20a t j =25 c t j =150 c 1.7 - 2 2.4 2.4 2.9 diode forward voltage v f v ge =0v, i f =20a t j =25 c t j =150 c 1.2 - 1.4 1.25 1.8 1.65 gate-emitter threshold voltage v ge(th) i c =700 a, v ce = v ge 345 v zero gate voltage collector current i ces v ce =600v, v ge =0v t j =25 c t j =150 c - - - - 40 2500 a gate-emitter leakage current i ges v ce =0v, v ge =20v - - 100 na transconductance g fs v ce =20v, i c =20a -14-s dynamic characteristic input capacitance c iss - 1100 1320 output capacitance c oss - 107 128 reverse transfer capacitance c rss v ce =25v, v ge =0v, f =1mhz -6376 pf gate charge q gate v cc =480v, i c =20a v ge =15v - 100 130 nc internal emitter inductance measured 5mm (0.197 in.) from case l e to-247ac - 13 - nh short circuit collector current 1) i c(sc) v ge =15v, t sc 10 s v cc 600v, t j 150 c - 200 - a 1) allowed number of short circuits: <1000; time between short circuits: >1s.
skw20n60 3 mar-00 switching characteristic, inductive load, at t j =25 c value parameter symbol conditions min. typ. max. unit igbt characteristic turn-on delay time t d(on) -3646 rise time t r -3036 turn-off delay time t d(off) - 225 270 fall time t f -5465 ns turn-on energy e on - 0.44 0.53 turn-off energy e off - 0.33 0.43 total switching energy e ts t j =25 c, v cc =400v, i c =20a, v ge =0/15v, r g =16 ? , energy losses include ?tail? and diode reverse recovery. - 0.77 0.96 mj anti-parallel diode characteristic diode reverse recovery time t rr t s t f - - - 300 30 270 - - - ns diode reverse recovery charge q rr - 490 - nc diode peak reverse recovery current i rrm -5.5-a diode peak rate of fall of reverse recovery current during t b di rr /dt t j =25 c, v r =200v, i f =20a, di f /dt =200a/ s - 180 - a/ s switching characteristic, inductive load, at t j =150 c value parameter symbol conditions min. typ. max. unit igbt characteristic turn-on delay time t d(on) -3646 rise time t r -3036 turn-off delay time t d(off) - 250 300 fall time t f -6376 ns turn-on energy e on - 0.67 0.81 turn-off energy e off - 0.49 0.64 total switching energy e ts t j =150 c v cc =400v, i c =20a, v ge =0/15v, r g =16 ? energy losses include ?tail? and diode reverse recovery. - 1.12 1.45 mj anti-parallel diode characteristic diode reverse recovery time t rr t s t f - - - 410 45 365 - - - ns diode reverse recovery charge q rr - 1270 - nc diode peak reverse recovery current i rrm -8.5-a diode peak rate of fall of reverse recovery current during t b di rr /dt t j =150 c v r =200v, i f =20a, di f /dt =200a/ s - 200 - a/ s
skw20n60 4 mar-00 i c , collector current 10hz 100hz 1khz 10khz 100khz 0a 10a 20a 30a 40a 50a 60a 70a 80a 90a 100a 110a t c =110c t c =80c i c , collector current 1v 10v 100v 1000v 0.1a 1a 10a 100a dc 1ms 200 s 50 s 15 s t p =4 s f , switching frequency v ce , collector - emitter voltage figure 1. collector current as a function of switching frequency ( t j 150 c, d = 0.5, v ce = 400v, v ge = 0/+15v, r g = 16 ? ) figure 2. safe operating area ( d = 0, t c = 25 c, t j 150 c) p tot , power dissipation 25c 50c 75c 100c 125c 0w 20w 40w 60w 80w 100w 120w 140w 160w 180w 200w i c , collector current 25c 50c 75c 100c 125c 0a 10a 20a 30a 40a 50a t c , case temperature t c , case temperature figure 3. power dissipation as a function of case temperature ( t j 150 c) figure 4. collector current as a function of case temperature ( v ge 15v, t j 150 c) i c i c
skw20n60 5 mar-00 i c , collector current 0v 1v 2v 3v 4v 5v 0a 10a 20a 30a 40a 50a 60a 15v 13v 11v 9v 7v 5v v ge =20v i c , collector current 0v 1v 2v 3v 4v 5v 0a 10a 20a 30a 40a 50a 60a 15v 13v 11v 9v 7v 5v v ge =20v v ce , collector - emitter voltage v ce , collector - emitter voltage figure 5. typical output characteristics ( t j = 25 c) figure 6. typical output characteristics ( t j = 150 c) i c , collector current 0v 2v 4v 6v 8v 10v 0a 10a 20a 30a 40a 50a 60a 70a -55c +150c t j =+25c v ce(sat) , collector - emitter saturation voltage -50c 0c 50c 100c 150c 1.0v 1.5v 2.0v 2.5v 3.0v 3.5v 4.0v v ge , gate - emitter voltage t j , junction temperature figure 7. typical transfer characteristics ( v ce = 10v) figure 8. typical collector-emitter saturation voltage as a function of junction temperature ( v ge = 15v) i c = 20a i c = 40a
skw20n60 6 mar-00 t , switching times 10a 20a 30a 40a 10ns 100ns t r t d(on) t f t d(off) t , switching times 0 ? 10 ? 20 ? 30 ? 40 ? 50 ? 60 ? 10ns 100ns t r t d(on) t f t d(off) i c , collector current r g , gate resistor figure 9. typical switching times as a function of collector current (inductive load, t j = 150 c, v ce = 400v, v ge = 0/+15v, r g = 1 6 ? ) figure 10. typical switching times as a function of gate resistor (inductive load, t j = 150 c, v ce = 400v, v ge = 0/+15v, i c = 20a) t , switching times 0c 50c 100c 150c 10ns 100ns t r t d(on) t f t d(off) v ge(th) , gate - emitter threshold voltage -50c 0c 50c 100c 150c 2.0v 2.5v 3.0v 3.5v 4.0v 4.5v 5.0v 5.5v typ. min. max. t j , junction temperature t j , junction temperature figure 11. typical switching times as a function of junction temperature (inductive load, v ce = 400v, v ge = 0/+15v, i c = 20a, r g = 1 6 ? ) figure 12. gate-emitter threshold voltage as a function of junction temperature ( i c = 0.7ma)
skw20n60 7 mar-00 e , switching energy losses 0a 10a 20a 30a 40a 50a 0.0mj 0.5mj 1.0mj 1.5mj 2.0mj 2.5mj 3.0mj e on * e off e ts * e , switching energy losses 0 ? 10 ? 20 ? 30 ? 40 ? 50 ? 60 ? 0.0mj 0.5mj 1.0mj 1.5mj 2.0mj 2.5mj 3.0mj e ts * e on * e off i c , collector current r g , gate resistor figure 13. typical switching energy losses as a function of collector current (inductive load, t j = 150 c, v ce = 400v, v ge = 0/+15v, r g = 1 6 ? ) figure 14. typical switching energy losses as a function of gate resistor (inductive load, t j = 150 c, v ce = 400v, v ge = 0/+15v, i c = 20a) e , switching energy losses 0c 50c 100c 150c 0.0mj 0.2mj 0.4mj 0.6mj 0.8mj 1.0mj 1.2mj 1.4mj 1.6mj e ts * e on * e off z thjc , transient thermal impedance 1s 10s 100s 1ms 10ms 100ms 1s 10 -4 k/w 10 -3 k/w 10 -2 k/w 10 -1 k/w 10 0 k/w 0.01 0.02 0.05 0.1 0.2 single pulse d =0.5 t j , junction temperature t p , pulse width figure 15. typical switching energy losses as a function of junction temperature (inductive load, v ce = 400v, v ge = 0/+15v, i c = 20a, r g = 1 6 ? ) figure 16. igbt transient thermal impedance as a function of pulse width ( d = t p / t ) *) e on and e ts include losses due to diode recovery. *) e on and e ts include losses due to diode recovery. *) e on and e ts include losses due to diode recovery. c 1 = 1 / r 1 r 1 r 2 c 2 = 2 / r 2 r ,(1/w) , (s) = 0.1882 0.1137 0.3214 2.24*10 -2 0.1512 7.86*10 -4 0.0392 9.41*10 -5
skw20n60 8 mar-00 v ge , gate - emitter voltage 0nc 25nc 50nc 75nc 100nc 125nc 0v 5v 10v 15v 20v 25v 480v 120v c , capacitance 0v 10v 20v 30v 10pf 100pf 1nf c rss c oss c iss q ge , gate charge v ce , collector - emitter voltage figure 17. typical gate charge ( i c = 20a) figure 18. typical capacitance as a function of collector-emitter voltage ( v ge = 0v, f = 1mhz) t sc , short circuit withstand time 10v 11v 12v 13v 14v 15v 0 s 5 s 10 s 15 s 20 s 25 i c(sc) , short circuit collector current 10v 12v 14v 16v 18v 20v 0a 50a 100a 150a 200a 250a 300a 350a v ge , gate - emitter voltage v ge , gate - emitter voltage figure 19. short circuit withstand time as a function of gate-emitter voltage ( v ce = 600v, start at t j = 25 c) figure 20. typical short circuit collector current as a function of gate-emitter voltage ( v ce 600v, t j = 150 c)
skw20n60 9 mar-00 t rr , reverse recovery time 100a/ s 300a/ s500a/ s 700a/ s 900a/ s 0ns 100ns 200ns 300ns 400ns 500ns 600ns i f = 10a i f = 20a i f = 40a q rr , reverse recovery charge 100a/ s300a/ s 500a/ s 700a/ s900a/ s 0nc 500nc 1000nc 1500nc 2000nc 2500nc i f = 10a i f = 20a i f = 40a di f /dt , diode current slope di f /dt , diode current slope figure 21. typical reverse recovery time as a function of diode current slope ( v r = 200v, t j = 125 c) figure 22. typical reverse recovery charge as a function of diode current slope ( v r = 200v, t j = 125 c) i rr , reverse recovery current 100a/ s 300a/ s 500a/ s 700a/ s 900a/ s 0a 4a 8a 12a 16a 20a 24a i f = 10a i f = 40a i f = 20a di rr /dt , diode peak rate of fall of reverse recovery current 100a/ s 300a/ s500a/ s 700a/ s900a/ s 0a/ s 200a/ s 400a/ s 600a/ s 800a/ s 1 000a/ s di f /dt , diode current slope di f /dt , diode current slope figure 23. typical reverse recovery current as a function of diode current slope ( v r = 200v, t j = 125 c) figure 24. typical diode peak rate of fall of reverse recovery current as a function of diode current slope ( v r = 200v, t j = 125 c)
skw20n60 10 mar-00 i f , forward current 0.0v 0.5v 1.0v 1.5v 2.0v 0a 5a 10a 15a 20a 25a 30a 35a 40a 150c -55c 25c 100c v f , forward voltage -40c 0c 40c 80c 120c 1.0v 1.5v 2.0v v f , forward voltage t j , junction temperature figure 25. typical diode forward current as a function of forward voltage figure 26. typical diode forward voltage as a function of junction temperature z thjcd , transient thermal impedance 1s 10s 100s 1ms 10ms 100ms 1s 10 -3 k/w 10 -2 k/w 10 -1 k/w 10 0 k/w 0.01 0.02 0.05 0.1 0.2 single pulse d =0.5 t p , pulse width figure 27. diode transient thermal impedance as a function of pulse width ( d = t p / t ) i f = 20a i f = 40 a c 1 = r 1 r 1 r 2 c 2 = r 2 r ,(1/w) , (s) = 0.358 9.02*10 -2 0.367 9.42*10 -3 0.329 9.93*10 -4 0.216 1.19*10 -4 0.024 1.92*10 -5
skw20n60 11 mar-00 dimensions symbol [mm] [inch] min max min max a 4.78 5.28 0.1882 0.2079 b 2.29 2.51 0.0902 0.0988 c 1.78 2.29 0.0701 0.0902 d 1.09 1.32 0.0429 0.0520 e 1.73 2.06 0.0681 0.0811 f 2.67 3.18 0.1051 0.1252 g 0.76 max 0.0299 max h 20.80 21.16 0.8189 0.8331 k 15.65 16.15 0.6161 0.6358 l 5.21 5.72 0.2051 0.2252 m 19.81 20.68 0.7799 0.8142 n 3.560 4.930 0.1402 0.1941 ? p 3.61 0.1421 q 6.12 6.22 0.2409 0.2449 to-247ac
skw20n60 12 mar-00 figure a. definition of switching times i rrm 90% i rrm 10% i rrm di /dt f t rr i f i,v t q s q f t s t f v r di /dt rr q=q q rr s f + t=t t rr s f + figure c. definition of diodes switching characteristics p(t) 12 n t(t) j figure d. thermal equivalent circuit figure b. definition of switching losses
skw20n60 13 mar-00 published by infineon technologies ag , bereich kommunikation st.-martin-strasse 53, d-81541 mnchen ? infineon technologies ag 2000 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies representatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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